SubsidieMeestersWafer scale dielectrics on two-dimensional semiconductors for high-performance field effect transistors
This project aims to commercialize high-performance MoS2/ZrO2 FETs for ultra-sensitive sensors by demonstrating wafer-scale fabrication and conducting market assessments for industrial adoption.
Projectdetails
Introduction
The current semiconductor market dominated by field effect transistors (FETs) is valued at $607.40 billion per year, projected to reach $980.80 billion by 2029. A significant portion of this market involves applications such as high-performance sensing and detection.
Potential of ATB Semiconductors
FETs based on atomically thin body (ATB) semiconductors, such as molybdenum disulphide (MoS2), have tremendous potential for ultra-sensitive sensors and detectors in the near term. FETs for these applications can be integrated into back end of the line (BEOL) processes, where the materials and integration requirements are less stringent compared to FETs for processor chips.
Challenges in Commercialization
However, commercialization of MoS2 FETs has been slowed by several challenges:
- Lack of stable and reproducible device operation leading to poor signal-to-noise ratios.
- Poor scalability and difficulty in achieving consistent electrical characteristics.
- Integration challenges with existing technology.
These issues have hindered the widespread adoption of MoS2 FETs for sensing and detection. Therefore, there is an urgent need to overcome these challenges to realize the full market potential of MoS2 FETs.
Breakthrough in Research
Research supported by the PIs ERC Advanced Grant has led to a transformative breakthrough in developing a high-quality zirconium dioxide (ZrO2) dielectric. This dielectric forms an ultra-clean interface with MoS2, allowing for the realization of highly stable and consistent FETs. This discovery has demonstrated the feasibility of high-performance, reliable MoS2 FETs with the potential for industrial-scale production, which could revolutionize the sensor/detection FETs market.
Proof of Concept Objectives
This Proof of Concept aims to take the necessary commercial and technical steps to bring this innovation to market:
- Demonstrate wafer-scale fabrication of MoS2/ZrO2 FETs.
- Validate their high performance.
- Conduct a critical market assessment to develop a business plan.
- Engage with industry and end-users to establish a clear route to commercialization.
Financiële details & Tijdlijn
Financiële details
| Subsidiebedrag | € 150.000 |
| Totale projectbegroting | € 150.000 |
Tijdlijn
| Startdatum | 1-4-2025 |
| Einddatum | 30-9-2026 |
| Subsidiejaar | 2025 |
Partners & Locaties
Projectpartners
- THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGEpenvoerder
Land(en)
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