High Speed Communication Links Based on Heterogeneous Chips
The COMb project aims to develop ultra-high-speed transceivers using Indium Phosphide and Lithium Niobate on a silicon nitride platform to enhance data transmission rates and efficiency.
Projectdetails
Introduction
The constant hunger for data is straining optical links, causing optical chip makers to struggle. Transceivers have to work at ever-increasing symbol rates.
Challenges
On top of the increasing symbol rates, transceivers need to handle more complex data formats. New materials have to be sought after as current modulator technologies, such as silicon, are reaching their limit.
Project Overview
In the COMb project, we will leverage recently obtained results to make ultra-high-speed transceivers based on the multi-material integration of Indium Phosphide and Lithium Niobate on a silicon nitride platform.
Technical Approach
By exploiting mode-locked lasers and using a large number of lines, higher data rates can be transmitted over the same channel.
Integration Benefits
By heterogeneously integrating the source with a Lithium Niobate modulator, very high symbol rates can be obtained.
Financiële details & Tijdlijn
Financiële details
Subsidiebedrag | € 150.000 |
Totale projectbegroting | € 150.000 |
Tijdlijn
Startdatum | 1-8-2022 |
Einddatum | 31-1-2024 |
Subsidiejaar | 2022 |
Partners & Locaties
Projectpartners
- UNIVERSITEIT GENTpenvoerder
Land(en)
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