Next-Generation Indium Gallium Nitride Micro LEDs

Introduction

Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with.

Mask Application

Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids.

Reshaping Process

These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets.

Current Capabilities

We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate.

Performance Metrics

Our KPIs include:

• Pixel size <1 µm
• Internal quantum efficiency >3.5%
• FWHM <50 nm

These metrics already outcompete current commercial options for sub-2 µm pixel size.