Full qualification, testing and commercial deployment of a unique on-chip memory technology offering the highest-density embedded memory in a standard CMOS process

Introduction

The Memory Bottleneck has become a major concern in modern Systems-on-a-Chip (SoC) and hence, the size of on-chip embedded memory continues to increase, already reaching up to 75% of the total SoC real estate.

Challenges with Current Technology

However, the industry standard SRAM technology is very area-inefficient and has been facing major scaling difficulties in modern process technologies (beyond 10nm).

RAAAM's Solution

RAAAM’s Gain-Cell Random Access Memory (GCRAM) technology is a unique on-chip memory solution that only requires 2-3 transistors to store a bit of data, as opposed to 6-8 transistors needed for the existing SRAM-based highest-density memory technology.

Advantages of GCRAM

• Area efficient
• Cost-effective
• Can be manufactured using the standard CMOS process

Development Goals

Having successfully tested the technology in various nodes ranging from 180nm-16nm, RAAAM currently aims to:

1. Develop the proposed memory technology for nodes ≤5nm
2. Fabricate the technology
3. Characterize the technology
4. Fully qualify it for production according to industry standards