HIGH-EFFICIENCY HIGH-POWER LASER BEAMING IN-SPACE SYSTEMS BASED ON SIC

Introduction

High-power laser transmission (HPLT) is one of the most promising wireless power transfer technologies due to its ability to efficiently transmit energy in space, opening the path to new potential applications. The HPLT uses monochromatic light to transfer energy to a remote system via a laser power converter (LPC).

Current State of Technology

Today, GaAs LPCs possess record efficiencies, with values around 69% at intensities around 11 W/cm². However, they are limited by a strong decrease in efficiency with light intensity due to the unavoidable series resistance losses caused by their low energy gap (Egap).

Project Objectives

RePowerSiC aims to develop a novel high-efficiency laser converter for intensities around 1 kW/cm², which will create a breakthrough in HPLT. The project tackles current HPLT limitations using two strategies:

1. Introducing new materials with higher energy gaps.
2. Developing novel LPC architectures.

Material and Architecture Innovations

RePowerSiC is based on silicon carbide (SiC) polytypes with Egap > 2.3 eV (50% higher than for GaAs) and on innovative device architectures with Rs ~ 10⁻⁴ Ohm cm² (> 10 times larger than GaAs). This revolutionary technology seeks to:

1. Obtain a power converter with an efficiency > 80%.
2. Increase the power density transferred by more than 1 order of magnitude when compared to the current technology.
3. Develop a green material manufacturing technology for eco-friendlier and cheaper devices.

Impact and Applications

The RePowerSiC project offers a paradigm shift in transferring power in the order of kilowatts or higher thanks to its scalability. The larger power density will allow for:

• Reduction of the LPC surface.
• Reduction of battery size, or even removal of it completely.

This high-risk/high-gain technology offers new disruptive solutions to power remote systems, being of great interest for satellites, landers, rovers, and in-space energy transmission for innovative applications. It also creates a new technology avenue in SiC materials and opens new domains of application.